DocumentCode :
1466618
Title :
Electron g factor engineering in IlI-V semiconductors for quantum communications
Author :
Kosaka, H. ; Kiselev, A.A. ; Baron, F.A. ; Kim, Ki Wook ; Yablonovitch, E.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
37
Issue :
7
fYear :
2001
fDate :
3/29/2001 12:00:00 AM
Firstpage :
464
Lastpage :
465
Abstract :
An entanglement-preserving photodetector converts photon polarisation to electron spin. Up and down spin must respond equally to oppositely polarised photons, creating a requirement for degenerate spin energies. ge≃0, for electrons. The authors present a plot of ge factor against lattice constant, analogous to bandgap against lattice constant, that can be used for g factor engineering of III-V alloys and quantum wells
Keywords :
III-V semiconductors; electron spin; g-factor; lattice constants; photodetectors; semiconductor quantum wells; IlI-V semiconductors; electron g factor; electron spin; entanglement-preserving photodetector; lattice constant; photon polarisation; quantum wells;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010314
Filename :
917497
Link To Document :
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