Title :
Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode
Author :
Vassilevski, K.V. ; Zorenko, A.V. ; Zekentes, K.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
3/29/2001 12:00:00 AM
Abstract :
4H-SiC single drift p+-n-n+ IMPATT diodes have been fabricated and characterised. The diodes have avalanche breakdown voltages of ~290 V. Microwave oscillations appeared in X-band at a threshold current of 0.3 A. The maximum output power of 300 mW was measured at an input pulsed current of 0.35 A
Keywords :
IMPATT diodes; avalanche breakdown; impact ionisation; microwave oscillators; semiconductor materials; silicon compounds; 0.3 A; 290 V; 300 mW; SiC; X-band; avalanche breakdown voltages; input pulsed current; microwave oscillations; output power; pulsed IMPATT diode; single drift p+-n-n+ diodes; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010285
