Title :
High-performance 5.2 GHz LNA with on-chip inductor to provide ESD protection
Author :
Leroux, P. ; Steyaert, M.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
fDate :
3/29/2001 12:00:00 AM
Abstract :
A new ESD protection methodology for high-frequency CMOS LNAs is introduced. An on-chip inductor is employed to drain off the hazardous ESD charge while tuning out the harmful parasitic input capacitance. A 5.2 GHz LNA has been designed, attaining high RF performance while providing a high level of ESD protection
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; capacitance; electrostatic discharge; field effect MMIC; inductors; 5.2 GHz; ESD protection; LNA; RF performance; high-frequency CMOS; on-chip inductor; parasitic input capacitance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010271
