DocumentCode :
1466724
Title :
Symmetric Double V-Shaped Microstrip Meander-Line Slow-Wave Structure for W-Band Traveling-Wave Tube
Author :
Shen, Fei ; Wei, Yanyu ; Xu, Xiong ; Liu, Yang ; Huang, Minzhi ; Tang, Tao ; Duan, Zhaoyun ; Gong, Yubin
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume :
59
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
1551
Lastpage :
1557
Abstract :
A design study for a low-voltage, high-efficiency, and wide-bandwidth W-band traveling-wave tube using a symmetric double V-shaped microstrip meander-line slow-wave structure combined with a sheet electron beam is described in this paper. The electromagnetic characteristics including the dispersion characteristics, interaction impedance, and transmission characteristics of this structure are presented, and the beam-wave interaction is calculated using particle-in-cell algorithms. Our study shows that, when the design voltage and current of the sheet electron beam are set to 4570 V and 100 mA, respectively, this miniature millimeter-wave power amplifier is capable of delivering several tens of watts output power, and the peak output power is about 110 W with a corresponding gain of 31.4 dB and an averaged electronic efficiency of 12% at 94 GHz.
Keywords :
microstrip lines; slow wave structures; W-band traveling-wave tube; beam-wave interaction; current 100 mA; dispersion characteristics; efficiency 12 percent; electromagnetic characteristics; frequency 94 GHz; gain 31.4 dB; interaction impedance; particle-in-cell algorithms; sheet electron beam; symmetric double V-shaped microstrip meander-line slow-wave structure; transmission characteristics; voltage 4570 V; Electromagnetics; Impedance; Integrated circuit modeling; Metals; Microstrip; Periodic structures; Power generation; Beam-wave interaction; slow-wave structure (SWS); symmetric double V-shaped microstrip meander line; traveling-wave tube (TWT);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2188635
Filename :
6166875
Link To Document :
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