Title :
A 44-GHz SiGe BiCMOS Phase-Shifting Sub-Harmonic Up-Converter for Phased-Array Transmitters
Author :
Kim, Sunghwan ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
fDate :
5/1/2010 12:00:00 AM
Abstract :
A compact 44-GHz phase-shifting direct up-conversion transmitter for phased-array transmitters, based on a doubled local oscillator (LO) phase-shifting approach, is fabricated in a 0.18-??m silicon germanium BiCMOS process. The upconverter includes a frequency doubler, an LO phase shifter, double balanced mixers, and an output driver. The upconverter has a conversion gain of 18 dB and continuous 360?? phase shift with a baseband in-phase/quadrature bandwidth of 1 GHz. Its maximum RF output power is -1.7 dBm in a 50-?? load with a total current consumption of 180 mA from a 4.4-V power supply. The active area is 940 ?? 700 ??m2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; mixers (circuits); oscillators; phase shifters; phased array radar; radar transmitters; BiCMOS phase-shifting sub-harmonic up-converter; SiGe; bandwidth 1 GHz; baseband in-phase bandwidth; current 180 mA; double balanced mixers; doubled local oscillator; frequency 44 GHz; frequency doubler; output driver; phase-shifting direct up-conversion transmitter; phased-array transmitters; quadrature bandwidth; size 0.18 mum; voltage 4.4 V; Local oscillator (LO) path phase shifter; millimeter-wave integrated circuits; phased array; silicon germanium (SiGe); transmitter; up-conversion mixer;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2045567
