• DocumentCode
    1466916
  • Title

    Time-dependent dielectric breakdown of chemical-vapour-deposited SiO2 gate dielectrics

  • Author

    Li, P.C. ; Ting, W. ; Kwong, D.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    25
  • Issue
    10
  • fYear
    1989
  • fDate
    5/11/1989 12:00:00 AM
  • Firstpage
    665
  • Lastpage
    666
  • Abstract
    Time-dependent dielectric breakdown (TDDB) data are presented for the first time on 200 AA chemical-vapour-deposited oxide films. The electric-field stress was performed at highly accelerated conditions (11-12 MV/cm). It is found that, owing to its lower defect density, TDDB of CVD oxides is superior to that of thermally grown oxides.
  • Keywords
    CVD coatings; dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; silicon compounds; 200 AA; MOS device; SiO 2 gate dielectrics; accelerated conditions; chemical-vapour-deposited; defect density; dielectric breakdown; electric-field stress; oxide films; time dependent breakdown data;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890450
  • Filename
    91754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1466916