Title :
Time-dependent dielectric breakdown of chemical-vapour-deposited SiO2 gate dielectrics
Author :
Li, P.C. ; Ting, W. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
5/11/1989 12:00:00 AM
Abstract :
Time-dependent dielectric breakdown (TDDB) data are presented for the first time on 200 AA chemical-vapour-deposited oxide films. The electric-field stress was performed at highly accelerated conditions (11-12 MV/cm). It is found that, owing to its lower defect density, TDDB of CVD oxides is superior to that of thermally grown oxides.
Keywords :
CVD coatings; dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; silicon compounds; 200 AA; MOS device; SiO 2 gate dielectrics; accelerated conditions; chemical-vapour-deposited; defect density; dielectric breakdown; electric-field stress; oxide films; time dependent breakdown data;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890450
