A new triple-well resonant tunneling diode with controllable double-negative resistance

Author

Mizuta, Hiroshi ; Tanoue, Tomonori ; Takahashi, Susumu

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1951

Lastpage

1956

Abstract

A newly structured triple-well resonant tunneling diode (RTD) is proposed as a triple-valued logic device. The superiority of this new RTD for triple-valued logic application is demonstrated with numerical simulation based on the transfer matrix method. This new RTD exhibits significant double-negative differential resistance, and the two current peak voltages are independently controlled with well thicknesses. Comparing the numerical calculation and experimental data, it is shown that agreement between the calculation and experiment on the two current peak voltages is excellent

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; logic devices; negative resistance; ternary logic; tunnel diodes; GaAs-AlAs-AlGaAs; controllable double-negative resistance; current peak voltages; numerical simulation; transfer matrix method; triple-valued logic device; triple-well resonant tunneling diode; well thicknesses; Diodes; Electrons; Gallium arsenide; Logic devices; Numerical simulation; Resonance; Resonant tunneling devices; Thickness control; Voltage control; Wave functions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7409

Filename

7409