Title :
High-speed GaAs-on-InP long wavelength transmitter OEICs
Author :
Lo, Y.H. ; Caneau, C. ; Bhat, R. ; Florez, L.T. ; Chang, G.K. ; Harbison, J.P. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
5/11/1989 12:00:00 AM
Abstract :
Using GaAs-on-InP heteroepitaxial technology, a long wavelength transmitter OEIC was fabricated, in which a GaInAsP-InP laser was monolithically integrated with a GaAs MESFET. A direct modulation of 5 Gb/s NRZ is demonstrated on this OEIC. This is the highest bit rate for GaAs-on-InP OEICs and is comparable to the best result ever reported on OEICs in general.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital communication systems; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; optical fibres; semiconductor junction lasers; transmitters; 5 Gbit/s; GaAs MESFET; GaAs-InP; GaAs-on-InP heteroepitaxial technology; GaInAsP-InP laser; III-V semiconductors; InP; NRZ; digital transmission; direct modulation; high-speed operation; long wavelength; monolithic integration; optical fibre communication; optoelectronic integrated circuits semiconductor lasers; transmitter OEICs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890451
