Title :
EOS/ESD reliability of partially depleted SOI technology
Author :
Raha, P. ; Diaz, Carlos ; Rosenbaum, E. ; Cao, M. ; VandeVoorde, P. ; Greene, W.
Author_Institution :
IC Bus. Div., Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
2/1/1999 12:00:00 AM
Abstract :
A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFETs and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multifinger SOI ESD protection MOSFETs has been derived from the model. We present experimental data to support this design rule
Keywords :
MOSFET; electrostatic discharge; protection; semiconductor device models; semiconductor device reliability; semiconductor diodes; silicon-on-insulator; EOS; ESD protection; MOSFET; analytical model; circuit simulator; design rule; diode; electrical overstress; electrostatic discharge; layout; partially depleted SOI technology; reliability; Earth Observing System; Electrostatic discharge; MOSFET circuits; Predictive models; Protection; Semiconductor diodes; Solid state circuits; Space vector pulse width modulation; Thermal stresses; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
