DocumentCode :
1467147
Title :
A new form of regenerative switching device-the camel switch
Author :
Al-bustani, Ausama
Author_Institution :
Sch. of Electr. & Electron. Eng., Lancashire Polytech., Preston, UK
Volume :
35
Issue :
11
fYear :
1988
fDate :
11/1/1988 12:00:00 AM
Firstpage :
1963
Lastpage :
1971
Abstract :
A new form of two-state switching device is proposed and analyzed. The new structure is composed of a camel diode and an adjoining p+ -n junction arranged in a back-to-back configuration. With negative voltage applied to the cathode, a regenerative feedback mechanism is established, which is the key to the proper operation of this camel switch. The relationship between the design parameters and the device performance is presented. The effects of the recombination-generation mechanism and the minority carriers are also included
Keywords :
feedback; minority carriers; semiconductor diodes; semiconductor switches; camel diode; camel switch; design parameters; minority carriers; negative voltage; p+-n junction; recombination-generation mechanism; regenerative feedback mechanism; regenerative switching device; two-state switching device; Cathodes; Charge carrier processes; Impurities; Molecular beam epitaxial growth; Optical modulation; P-n junctions; Schottky diodes; Semiconductor diodes; Switches; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.7411
Filename :
7411
Link To Document :
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