• DocumentCode
    1467147
  • Title

    A new form of regenerative switching device-the camel switch

  • Author

    Al-bustani, Ausama

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Lancashire Polytech., Preston, UK
  • Volume
    35
  • Issue
    11
  • fYear
    1988
  • fDate
    11/1/1988 12:00:00 AM
  • Firstpage
    1963
  • Lastpage
    1971
  • Abstract
    A new form of two-state switching device is proposed and analyzed. The new structure is composed of a camel diode and an adjoining p+ -n junction arranged in a back-to-back configuration. With negative voltage applied to the cathode, a regenerative feedback mechanism is established, which is the key to the proper operation of this camel switch. The relationship between the design parameters and the device performance is presented. The effects of the recombination-generation mechanism and the minority carriers are also included
  • Keywords
    feedback; minority carriers; semiconductor diodes; semiconductor switches; camel diode; camel switch; design parameters; minority carriers; negative voltage; p+-n junction; recombination-generation mechanism; regenerative feedback mechanism; regenerative switching device; two-state switching device; Cathodes; Charge carrier processes; Impurities; Molecular beam epitaxial growth; Optical modulation; P-n junctions; Schottky diodes; Semiconductor diodes; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.7411
  • Filename
    7411