Title :
Si:SiGe MODFET current mirror
Author :
Fobelets, K. ; Jeamsaksiri, Wutthinan ; Hampson, J. ; Toumazou, Christofer ; Thornton, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
fDate :
10/29/1998 12:00:00 AM
Abstract :
Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (Vgs ) of ±0.5 V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design
Keywords :
Ge-Si alloys; current mirrors; elemental semiconductors; high electron mobility transistors; semiconductor materials; silicon; DC characteristics; MODFET; Si-SiGe; Si:SiGe heterojunction technology; circuit design; device processing; gate voltage swing; material growth; n-depletion mode modulation doped field effect transistor; negative inverting voltage following current mirror; quasi-linear response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981494
