DocumentCode
1467447
Title
Improved temperature dependence of 1.3 μm AlGaInAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure
Author
Sweeney, S.J. ; Higashi, T. ; Adams, A.R. ; Uchida, T. ; Fujii, T.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
34
Issue
22
fYear
1998
fDate
10/29/1998 12:00:00 AM
Firstpage
2130
Lastpage
2132
Abstract
The threshold current Ith of 1.3 μm AlGaInAs devices increases by ~80% over a 1GPa pressure range contrasting with decreases of 10-15% in 1.3 μm InGaAsP devices. This can be explained with 50% nonradiative recombination in InGaAsP and only ~20% in AlGaInAs devices, resulting in a much improved temperature dependence of Ith
Keywords
III-V semiconductors; aluminium compounds; electron-hole recombination; energy gap; gallium arsenide; indium compounds; optical fibre subscriber loops; optical transmitters; quantum well lasers; 1.3 micrometre; AlGaInAs; MQW semiconductor diode lasers; hydrostatic pressure; nonradiative recombination; temperature dependence; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981461
Filename
741335
Link To Document