RT pulsed operation of metamorphic VCSEL at 1.55 μm

Author

Boucart, J. ; Starck, C. ; Plais, A. ; Derouin, E. ; Fortin, C. ; Gaborit ; Pinquier, A. ; Goldstein, L. ; Carperntier, D. ; Jacquet, J.

Author_Institution

Opto & Groupement d´´Internet Econ., Alcatel Corp. Res. Center, Marcoussis, France

Volume

34

Issue

22

fYear

1998

fDate

10/29/1998 12:00:00 AM

Firstpage

2133

Lastpage

2135

Abstract

An all molecular beam epitaxy grown 1.55 μm vertical cavity surface-emitting laser is presented which comprises an InP/InGaAsP bottom mirror, multiple quantum well active layer and a GaAlAs/GaAs metamorphic top mirror directly grown on the InP cavity. This structure takes advantage of the intrinsic optical, electrical and thermal properties of GaAlAs/GaAs material and is compatible with a 2 in process. Such an approach will therefore lead to a drastic reduction in the cost of optical sources and offer the possibility of a massive development of the optical network

Keywords

molecular beam epitaxial growth; optical fibre networks; optical transmitters; quantum well lasers; semiconductor growth; surface emitting lasers; 1.55 micrometre; 2 in; GaAlAs-GaAs; InP-InGaAsP; RT pulsed operation; bottom mirror; metamorphic VCSEL; metamorphic top mirror; molecular beam epitaxy; multiple quantum well active layer; optical fibre communication; optical network; optical sources; vertical cavity surface-emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19981508

Filename

741337