DocumentCode
1467587
Title
Quantum confined Stark effects of heavy-hole confined states in In 0.53Ga0.47As/In0.52Al0.48As multiquantum well structure using photocurrent spectroscopy
Author
Tanaka, K. ; Kotera, N. ; Nakamura, H.
Author_Institution
Dept. of Comput. Sci. & Electron., Kyushu Inst. of Technol., Iizuka, Japan
Volume
34
Issue
22
fYear
1998
fDate
10/29/1998 12:00:00 AM
Firstpage
2163
Lastpage
2164
Abstract
Photocurrents in an In0.53Ga0.47As/In0.52Al0.48 As multiquantum well structure containing 10 nm wide wells were measured at room temperature. The spectra showed fine steplike structures accented by exciton peaks of interband transitions. The exciton peaks of field-hole transitions responded very sensitively to the electric field due to the quantum confined Stark effect. The energies of the experimental confined states of the heavy-hole extrapolated from the larger electric field were roughly proportional to the squares of quantum numbers. The nonparabolicity of an effective mass of the heavy-hole was surmised to be very small in a direction normal to the well plane
Keywords
III-V semiconductors; aluminium compounds; effective mass; excitons; gallium arsenide; indium compounds; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As/In0.52Al0.48 As multiquantum well; effective mass; electric field; exciton; field-hole transition; heavy hole confined state; interband transition; photocurrent spectroscopy; quantum confined Stark effect; quantum number;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981189
Filename
741380
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