• DocumentCode
    1467622
  • Title

    Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures

  • Author

    Castro, F. ; Nabet, Bahram ; Culp, Jim

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA
  • Volume
    34
  • Issue
    22
  • fYear
    1998
  • fDate
    10/29/1998 12:00:00 AM
  • Firstpage
    2170
  • Lastpage
    2171
  • Abstract
    An accurate expression for sheet carrier density (ns) calculations in modulation-doped heterostructures is developed from a nonlinear model of the Fermi potential variation with ns. This closed-form expression produces numerical results that agree well with computer simulations of low sheet carrier density AlGaAs/GaAs heterostructures at 300 K
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; p-n heterojunctions; photodetectors; semiconductor device models; 300 K; AlGaAs-GaAs; Fermi potential variation; III-V semiconductors; MODFETs; closed-form expression; modulation-doped heterostructures; nonlinear model; photodetectors; sheet carrier density calculations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981450
  • Filename
    741389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1467622