DocumentCode :
1467643
Title :
Scaling of maximum capacitance of MOSFET with ultra-thin oxide
Author :
Ricco, Bruno
Volume :
34
Issue :
22
fYear :
1998
fDate :
10/29/1998 12:00:00 AM
Firstpage :
2175
Lastpage :
2176
Abstract :
The maximum capacitance of a polysilicon-gate MOSFET against oxide thickness is studied for different gate and substrate doping levels. It is found that substrate doping contributes to transistor capacitance degradation, imposing a limit on the lower voltage operation for sub-0.1 μm CMOS technologies
Keywords :
MOSFET; capacitance; 0.1 micron; capacitance; gate doping; low voltage CMOS technology; polysilicon gate MOSFET; scaling; substrate doping; ultrathin oxide;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981471
Filename :
741392
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1467643
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