InP HBT Transferred to Higher Thermal Conductivity Substrate

Author

Scott, Dennis W. ; Monier, Cedric ; Wang, Sujane ; Radisic, Vesna ; Nguyen, Phuong ; Cavus, Abdullah ; Deal, William R. ; Gutierrez-Aitken, Augusto

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

507

Lastpage

509

Abstract

We report the first demonstration of an InP double heterojunction bipolar transistor (HBT) transferred to a higher thermal conductivity substrate. This process allows lithographic access to both the frontside and backside of the device to minimize parasitic capacitances while transfer to a SiC substrate should reduce junction temperature by 42%, allowing for higher current density operation. The 0.20 × 3 μm² emitter-area HBT has peak common-emitter current gain β = 22 and breakdown V_BR,_CEO >; 4 V. No electrical degradation from the transferred-substrate process is observed. RF measurements show device peak f_τ = 397 GHz, f_max ≥ 400 GHz, and maximum available gain (MAG) at 100 GHz is 15.3 dB.

Keywords

current density; electric breakdown; heterojunction bipolar transistors; indium compounds; lithography; silicon compounds; thermal conductivity; HBT; InP; RF measurements; SiC; breakdown; current density; electrical degradation; frequency 100 GHz; higher thermal conductivity substrate; lithographic access; transferred substrate; Conductivity; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Metals; Substrates; Thermal conductivity; Heterojunction bipolar transistors (HBTs); indium phosphide (InP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2185920

Filename

6168218