Title :
A novel cap-annealing technique using a WNx film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process
Author :
Nogami, T. ; Nagaoka, Masami ; Iida, Norio
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
11/1/1988 12:00:00 AM
Abstract :
A novel cap-annealing technique for n+ implanted layers in GaAs MESFET´s was investigated from the viewpoint of thermal stress relaxation. In this technique, the same metal as the gate´s-tungsten nitride (WNx) was used for an underlayer of a double-layer annealing cap. FET parameters Vth, K-value, and Ng showed behavior in the short-channel region just as if the short-channel effects were suppressed
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; metallisation; semiconductor technology; tungsten compounds; GaAs; K-value; MESFET fabrication; WNx film capsulant; cap-annealing technique; double-layer annealing cap; n+ implanted layers; refractory gate self-alignment; short-channel region; thermal stress relaxation; Annealing; Crystallization; Electron devices; FETs; Gallium arsenide; MESFETs; Optical films; Semiconductor films; Silicon; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
