• DocumentCode
    1467735
  • Title

    The effect of lapping method on the thermal reliability of a GMR head based on Black´s equation

  • Author

    Li, Yufeng ; Meyer, Dallas

  • Author_Institution
    Read-Rite Corp., Milpitas, CA, USA
  • Volume
    37
  • Issue
    2
  • fYear
    2001
  • fDate
    3/1/2001 12:00:00 AM
  • Firstpage
    974
  • Lastpage
    979
  • Abstract
    The Black´s equation is used as the theoretical basis in this study to investigate the effect of a lapping technique on the thermal reliability of a GMR head. Current density is identified via experiments as the key parameter affecting the thermal reliability of a GMR head from the viewpoint of head lapping. Mathematical models are developed to connect the thermal reliability with the inherent features of the two lapping techniques: the electrical lapping guide (ELG) and the magnetic device resistance (device). It is found that in general the effect of lapping on thermal reliability is a function of the deviations of the stripe height, the GMRE resistance and the wafer process parameters, as well as the lead resistance. For constant I-biasing, wafer process variation has no effect on head thermal reliability for ELG lapping, but it does reduce the thermal life-time of a head for device lapping. On the other hand, wafer process variation deteriorates the thermal reliability for both ELG and device lapping if constant V-biasing is going to be used in a hard drive. Equal thermal reliability charts are provided to help select the lapping method for thermal reliability improvement based on the wafer process and lapping process capabilities
  • Keywords
    current density; giant magnetoresistance; magnetic heads; modelling; reliability; thermal analysis; Black equation; GMR head; GMRE resistance; constant I-biasing; constant V-biasing; current density; electrical lapping guide; giant magnetoresistive head; hard drive; lapping method; lead resistance; magnetic device resistance; mathematical models; stripe height deviation; thermal life-time; thermal reliability; wafer process parameters; wafer process variation; Current density; Electric resistance; Equations; Lapping; Magnetic devices; Magnetic heads; Magnetic recording; Mathematical model; Reliability theory; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.917653
  • Filename
    917653