Transmission Performances of CPW Lines on a Laser-Crystallization Polysilicon Passivated High-Resistivity Silicon Substrate

Author

Wang, Ruey-Lue ; Su, Yan-Kuin ; Chen, Chao-Jung

Author_Institution

Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan

Volume

2

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

847

Lastpage

851

Abstract

In this paper, we report the preparation of polycrystalline silicon by excimer laser-crystallization of amorphous silicon α and its use as a surface-passivation layer (SPL) on high-resistivity silicon (HR-Si) substrates. The transmission loss (α_TL) of coplanar waveguide (CPW) lines on an oxide-coated HR-Si substrate with a 100-nm excimer laser-annealed (ELA) SPL is less than 1.16 dB/cm at frequencies up to 20 GHz. Therefore, an ELA-SPL is capable of providing good surface passivation for radio-frequency integrated circuit applications. The influence of geometric parameters on the transmission characteristics of the CPW lines is also studied. Extracted material parameters and equivalent lumped elements are used to interpret the loss mechanisms.

Keywords

coplanar waveguides; crystallisation; laser beam annealing; passivation; silicon; CPW lines; amorphous silicon; coplanar waveguide; excimer laser-annealed SPL; excimer laser-crystallization; frequency 20 GHz; high-resistivity silicon substrates; laser-crystallization polysilicon passivated high-resistivity silicon substrate; radio-frequency integrated circuit applications; size 100 nm; surface-passivation layer; Conductivity; Coplanar waveguides; Educational institutions; Propagation losses; Silicon; Substrates; Surface waves; Coplanar waveguide; equivalent substrate resistivity; high-resistivity silicon; laser-annealing; transmission loss;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2012.2187056

Filename

6168243