DocumentCode :
1467878
Title :
On the use of Thornber´s augmented drift-diffusion equation for modeling GaAs devices
Author :
Blakey, Peter A. ; Burdick, Stephen A. ; Sandborn, Peter A.
Author_Institution :
Microelectron. & Comput. Technol. Corp., Austin, TX, USA
Volume :
35
Issue :
11
fYear :
1988
fDate :
11/1/1988 12:00:00 AM
Firstpage :
1991
Lastpage :
1994
Abstract :
This brief examines the usefulness of Thornber´s augmented drift-diffusion equation (1982) for modeling submicrometer GaAs devices. A general methodology for assessing charge transport models is outlined, and a new method for calculating Thornber´s augmenting transport coefficients is described. A Monte Carlo simulation of electron transport in GaAs is then used to perform calculations that permit an assessment of the utility of Thornber´s equation. These results demonstrate significant problems in using Thornber´s equation to model submicrometer GaAs devices
Keywords :
III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; semiconductor device models; GaAs device modelling; Monte Carlo simulation; Thornber´s equation; charge transport models; drift-diffusion equation; electron transport; submicron devices; transport coefficients; Annealing; Equations; Gallium arsenide; Insulation; MESFETs; Metal-insulator structures; Optical films; Surface resistance; Thermal stresses; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.7416
Filename :
7416
Link To Document :
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