Title :
Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly-Si TFT Using Polydiacetylene-Based Thermoresponsive Fluorometry
Author :
Choi, Ji-Min ; Choi, Sung-Jin ; Yarimaga, Oktay ; Yoon, Bora ; Kim, Jong-Man ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fDate :
5/1/2011 12:00:00 AM
Abstract :
The thermal distribution of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with sizes close to the nanoregime is analyzed by means of a fluorescent nanothermographic imaging technique based on the heat-induced fluorescence feature of polydiacetylene (PDA) supramolecules. The direct detection of nanoscale hot spots generated by hot carriers in poly-Si TFTs is demonstrated with sufficient spatial resolution. The thermal information of poly-Si TFTs under operation is recorded in a PDA-embedded polyvinyl alcohol film in the fluorescence state. The proposed thermal analysis method for poly-Si TFTs overcomes the fundamental spatial resolution limitation of conventional infrared detection systems and guarantees nanoscale spatial resolution. This approach, which offers cost effectiveness, nontoxicity, and simplicity of calibration steps, can be useful for further analysis of the degradation mechanism and reliability issues of submicrometer poly-Si TFTs.
Keywords :
elemental semiconductors; fluorescence; hot carriers; infrared spectra; semiconductor device reliability; silicon; thin film transistors; Si; calibration; fluorescence state; fluorescent nanothermographic imaging; heat-induced fluorescence; hot carriers; infrared detection; nanoscale hot spot; polySi TFT; polydiacetylene-based thermoresponsive fluorometry; polyvinyl alcohol film; reliability; thermal distribution; thin-film transistors; Degradation; Hot carriers; Imaging; Nanoscale devices; Spatial resolution; Thermal analysis; Thin film transistors; Fluorescent imaging; hot carrier; hot spot; polycrystalline silicon (poly-Si); polydiacetylene (PDA); reliability; thermal imaging; thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2116025