Improved radiation hardness of MOS devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing

Author

Lo, G.Q. ; Shih, D.K. ; Ting, W.C. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

25

Issue

13

fYear

1989

fDate

6/22/1989 12:00:00 AM

Firstpage

812

Lastpage

813

Abstract

The radiation hardness of MOS devices with ultrathin nitrided oxides ( approximately 100 AA) prepared by rapid thermal nitridation (RTD) of thin oxides has been studied. The radiation was performed by exposing devices under X-rays of 50 keV to a dose of 0.5 Mrad(Si). Compared with conventional thermal oxides, the RTN oxide devices exhibit a much smaller increase in both the fixed charge N_f and the interface state D_it densities. In addition, it is found that higher RTN temperature and/or longer durations produce smaller Delta N_f and Delta D_it.

Keywords

X-ray effects; dielectric thin films; insulated gate field effect transistors; radiation hardening (electronics); semiconductor technology; 0.5E6 rad; 100 A; 50 keV; RTD; RTN duration; RTN temperature; SiO₂-Si₃N₄ gate dielectrics; X-ray exposure; fixed charge density; interface state density; oxynitride films; radiation hardness; rapid thermal nitridation; rapid thermal processing; ultrathin nitrided oxide gate dielectrics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890546

Filename

91773