• DocumentCode
    14683
  • Title

    Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology

  • Author

    Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Scheer, P. ; Celi, D. ; Juge, A. ; Zimmer, T.

  • Author_Institution
    Lab. IMS, Univ. de Bordeaux, Bordeaux, France
  • Volume
    51
  • Issue
    1
  • fYear
    2015
  • fDate
    1 8 2015
  • Firstpage
    71
  • Lastpage
    72
  • Abstract
    The influence of electrothermal behaviour on radio frequency (RF) performances of 28 nm bulk complementary metal-oxide semiconductor technology is examined. Biased continuous-wave RF and pulsed RF (applying different DC pulse and RF pulse width combinations) characterisations are performed within the 1-30 GHz frequency domain at room temperature and the transit frequency (fT) is extracted at 15 GHz frequency. It has been found that the degradation in fT on I/O devices is about 3 GHz because of the self-heating effect.
  • Keywords
    CMOS integrated circuits; UHF integrated circuits; microwave integrated circuits; complementary metal-oxide semiconductor; electrothermal behaviour; frequency 1 GHz to 30 GHz; pulsed radio frequency characterisation; self-heating effect; size 28 nm; temperature 293 K to 298 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.3634
  • Filename
    7006818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=14683