Title :
Stationary charge domain in GaAs MESFETs: dimensional and electrical characterisation
Author :
Kretly, L.C. ; Giarola, A.J.
Author_Institution :
Univ. Estadual de Campinas Fac. de Engenharia Eletrica, Brazil
fDate :
6/22/1989 12:00:00 AM
Abstract :
Numerical results of the location, size and voltage associated with stationary dipole charge layers in GaAs MESFETs and their dependences on gate and drain bias are presented. The results suggest the need of more analytical work describing the domain characteristics for a better understanding of how the dipole charge layer influences GaAs MESFET operation.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET operation; dimensional characterisation; domain characteristics; drain bias; electrical characterisation; gate bias; models; semiconductors; stationary charge domain; stationary dipole charge layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890547
