DocumentCode
1468470
Title
High power continuous-wave operation of 630 nm-band laser diode arrays
Author
Osinski, J.S. ; Bo Lu ; Zhao, Hang ; Schmitt, Benoit
Author_Institution
SDL Inc., San Jose, CA
Volume
34
Issue
24
fYear
1998
fDate
11/26/1998 12:00:00 AM
Firstpage
2336
Lastpage
2337
Abstract
A high continuous-wave (CW) power of 6W at 626 nm and 15 W at 637 nm with 15 and 30% power conversion efficiencies, respectively, has been demonstrated from AlGaInP/GaInP laser diode arrays. Fibre-coupled 630 nm CW bars demonstrate good reliability at 3 W. Such devices are useful for photo-dynamic therapy (PDT) or display applications
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser reliability; semiconductor device reliability; semiconductor laser arrays; 15 W; 15 percent; 30 percent; 6 W; 626 nm; 637 nm; AlGaInP-GaInP; III-V semiconductors; continuous-wave operation; display applications; fibre-coupled CW bars; laser diode arrays; photo-dynamic therapy; power conversion efficiencies; reliability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981611
Filename
743034
Link To Document