High Temperature Stable Operation of 1.3- $\mu$ m Quantum-Dot Laser Integrated With Single-Mode Tapered Si $_{3}$

A photonic-integrated circuit consisting of a 1.3-μm quantum-dot laser and Si₃N₄ single-mode tapered waveguide, suitable for high temperature operation, is demonstrated. The laser active region incorporates p-doping, tunnel injection, and a superlattice barrier. The temperature dependence of the threshold current of the discrete laser is characterized by T₀ ~ ∞ in the temperature range 5^°C ≤ T ≤ 60^°C and 90 K in the range 60^°C <; T ≤ 85^°C. The Si₃N₄ tapered waveguide is monolithically integrated with a 2.1-μm coupling groove. The insertion loss of a 160-μm waveguide in the integrated circuit is 2.47 dB.