Title :
200 GHz pulsed GaAs-IMPATT diodes
Author :
Benz, C. ; Freyer, J.
Author_Institution :
Tech. Univ. Munchen, Germany
fDate :
11/26/1998 12:00:00 AM
Abstract :
GaAs double-drift Read IMPATT diodes for pulsed operation are designed for very high current densities (175 kA/cm2) at frequencies up to 200 GHz. The active devices are developed by using Monte-Carlo simulations in addition to a large-signal drift-diffusion model. RF output powers of 1 W at 176.5 GHz and 0.3 W at 198 GHz are realised
Keywords :
III-V semiconductors; IMPATT diodes; Monte Carlo methods; current density; gallium arsenide; millimetre wave diodes; semiconductor device models; 0.3 W; 1 W; 176.5 GHz; 198 GHz; GaAs; III-V semiconductors; Monte-Carlo simulations; RF output powers; current densities; double-drift Read IMPATT diodes; large-signal drift-diffusion model; pulsed IMPATT diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981628
