Title :
High performance AlGaN/GaN HEMT with improved ohmic contacts
Author :
Cai, S.J. ; Li, R. ; Chen, Y.L. ; Wong, L. ; Wu, W.G. ; Thomas, S.G. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
11/26/1998 12:00:00 AM
Abstract :
Various metal films and rapid thermal annealing conditions were investigated to improve the ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Θmm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Θmm, corresponding to a contact resistance of 5.38×108Θcm2. The fabricated high electron mobility transistors with a 0.25 μm length gate exhibit a cutoff frequency fT of 60 GHz and an f max of 100 GHz
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ohmic contacts; rapid thermal annealing; 0.039 ohmmm; 0.25 micron; 100 GHz; 60 GHz; AlGaN-GaN; HEMT; III-V semiconductors; contact resistance; cutoff frequency; gate length; ohmic contacts; rapid thermal annealing conditions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981618
