A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance

Author

Endo, Kazuhiko ; O´uchi, Shinichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1345

Lastpage

1352

Abstract

A correlation between the characteristics of the 30-nm LG fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the V_th variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the V_th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to σSNM are clarified.

Keywords

MOSFET; SRAM chips; integrated circuit noise; FinFET characteristics; SNM variation; SRAM performance; correlative analysis; fin-shaped field-effect transistors; pass-gate transistors; size 30 nm; static noise margin variation; static random-access memory performance; storage node; transistor variation; voltage variation effect; Correlation; FinFETs; Logic gates; Random access memory; Scanning electron microscopy; Semiconductor device measurement; Fin-shaped field-effect transistor (FinFET); noise margin; static random-access memory (SRAM); variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2188633

Filename

6168825