A 900-MHz CMOS low-phase-noise voltage-controlled ring oscillator

Author

Yan, William Shing Tak ; Luong, Howard Cam

Author_Institution

Electr. & Electron. Eng. Dept., Maxim Integrated Products, Sunnyvale, CA, USA

Volume

48

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

216

Lastpage

221

Abstract

A 900-MHz two-stage CMOS voltage-controlled ring oscillator (VCO) with good phase-noise performance is presented. Implemented in a 0.5-μm CMOS technology and at 2.5-V supply voltage, the VCO has a wide operating frequency range from 661.5 MHz to 1.27 GHz with a peak VCO gain (K_VCO) of -630 MHz/V. At 900 MHz, the phase noise of the VCO is -105.5 dBc/Hz at 600-kHz frequency offset with low power consumption of 15.4 mW. The gain and phase mismatches are less than 0.25 dB and 0.5°, respectively, which corresponds to an image rejection of better than 31 dB. The chip area is only 125×102 μm²

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; low-power electronics; phase locked loops; phase noise; transceivers; voltage-controlled oscillators; 0.5 micron; 15.4 mW; 2.5 V; 661.5 MHz to 1.27 GHz; 900 MHz; CMOS; chip area; frequency offset; gain mismatch; image rejection; low-phase-noise voltage-controlled ring oscillator; operating frequency range; peak VCO gain; phase mismatch; power consumption; CMOS technology; Circuits; Delay; Energy consumption; Frequency; Inductors; Phase locked loops; Phase noise; Ring oscillators; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.917794

Filename

917794