Title :
Improved dynamics and linewidth enhancement factor in strained-layer lasers
Author :
Ghiti, A. ; O´Reilly, E.P. ; Adams, A.R.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
6/22/1989 12:00:00 AM
Abstract :
Shows that a laser in which the active region consists of a strained-layer structure should have improved dynamics and noise characteristics. The authors find that the relaxation oscillation frequency is enhanced and the linewidth enhancement factor is reduced by strain.
Keywords :
semiconductor junction lasers; improved dynamics; linewidth enhancement factor; noise characteristics; relaxation oscillation frequency; semiconductor lasers; strained-layer lasers; strained-layer structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890553
