• DocumentCode
    1468822
  • Title

    Improved dynamics and linewidth enhancement factor in strained-layer lasers

  • Author

    Ghiti, A. ; O´Reilly, E.P. ; Adams, A.R.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • Volume
    25
  • Issue
    13
  • fYear
    1989
  • fDate
    6/22/1989 12:00:00 AM
  • Firstpage
    821
  • Lastpage
    823
  • Abstract
    Shows that a laser in which the active region consists of a strained-layer structure should have improved dynamics and noise characteristics. The authors find that the relaxation oscillation frequency is enhanced and the linewidth enhancement factor is reduced by strain.
  • Keywords
    semiconductor junction lasers; improved dynamics; linewidth enhancement factor; noise characteristics; relaxation oscillation frequency; semiconductor lasers; strained-layer lasers; strained-layer structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890553
  • Filename
    91780