Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates

Author

Hsu, William ; Peng, Cheng-Yi ; Lin, Cheng-Ming ; Chen, Yen-Yu ; Chen, Yen-Ting ; Ho, Wei-Shuo ; Liu, Chee Wee

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

422

Lastpage

424

Abstract

Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain (S/D) on flexible polyimide substrates are fabricated by a simple low-temperature process ( ?? 250??C), which preserves the high mobility of Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the single-crystalline Ge thin film onto polyimide substrates. The Schottky-barrier S/D is formed by using Pt/n-Ge contact, showing a low hole barrier height. The device has a linear hole mobility of ~ 170 cm²??V^-1??s^-1 and a saturation current of ~ 1.6 ??A/??m at V_d = - 1.5 V for the channel length and width of 15 and 280 ??m, respectively.

Keywords

Schottky barriers; adhesive bonding; elemental semiconductors; flexible electronics; germanium; hole mobility; platinum; thin film transistors; wafer bonding; Ge; Schottky barrier source-drain; adhesive wafer bonding; flexible polyimide substrate; flexible single crystalline p-channel thin film transistor; high mobility channel; hole mobility; polyimide substrates; smart-cut techniques; Ge; Schottky-barrier source/drain (S/D); plastic substrate; thin-film transistor (TFT); wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2044013

Filename

5446373