A 40-Gb/s preamplifier using AlGaAs/InGaAs HBTs with regrown base contacts

Author

Suzuki, Yasuyuki ; Shimawaki, Hidenori ; Amamiya, Yasushi ; Nagano, Nobuo ; Yano, Hitoshi ; Honjo, Kazuhiko

Author_Institution

Optoelectron. & High Frequency Res. Labs., NEC Corp., Ibaraki, Japan

Volume

34

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

143

Lastpage

147

Abstract

A preamplifier for 40-Gb/s optical transmission systems incorporating AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with p⁺ regrown extrinsic base layers is described. The HBTs have a heavily doped regrown p⁺-GaAs layer in the extrinsic base regions and a thin graded InGaAs strained layer for the intrinsic base. Their measured peak f_max is above 200 GHz. The developed preamplifier provides a bandwidth of 38.4 GHz and a transimpedance gain of 41.1 dB Ω. Moreover, the frequency response as an optical receiver has a bandwidth of 32 GHz. These characteristics make the preamplifier suitable for use in a 40-Gb/s optical receiver. These results show that AlGaAs/InGaAs HBTs with p⁺ regrown extrinsic base layers are very promising for use in 40-Gb/s optical transmission systems

Keywords

III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; optical receivers; preamplifiers; wideband amplifiers; 38.4 GHz; 40 Gbit/s; AlGaAs-InGaAs; AlGaAs/InGaAs heterojunction bipolar transistor; optical receiver; optical transmission system; preamplifier; regrown base contact; Bandwidth; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Optical receivers; Preamplifiers; Stimulated emission; Time division multiplexing; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.743756

Filename

743756