Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

Author

Öjefors, Erik ; Heinemann, Bernd ; Pfeiffer, Ullrich R.

Author_Institution

Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany

Volume

59

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

1311

Lastpage

1318

Abstract

A 325-GHz ×18 frequency multiplier chain implemented in a f_τ/f_max = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively.

Keywords

Ge-Si alloys; amplifiers; cascade networks; driver circuits; frequency multipliers; heterojunction bipolar transistors; millimetre wave integrated circuits; HBT technology; SiGe; balanced doubler; cascaded tripler stage; doubler breakout circuit; driver amplifier; frequency 220 GHz; frequency 317 GHz to 328 GHz; frequency multiplier chains; heterojunction bipolar transistor; millimeter-wave integrated circuit; power 1.5 W; Driver circuits; Harmonic analysis; Heterojunction bipolar transistors; Loss measurement; Power generation; Power measurement; Silicon germanium; Frequency multipliers; heterojunction bipolar transistor (HBT); millimeter-wave integrated circuits; silicon; submillimeter waves;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2011.2114364

Filename

5728889