Title :
High-voltage CdSe-Ge TFT driver circuits for passive AC-TFEL displays
Author :
De Vos, J. ; De Smet, H. ; De Cubber, A.M. ; Van Calster, A.
Author_Institution :
Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium
fDate :
2/1/1999 12:00:00 AM
Abstract :
Since an electroluminescent display (ELD) is a capacitive display driven at high voltage, it is necessary to fabricate high-voltage, large-current drivers. It is shown that a 20-μm complementary CdSe-Ge thin-film transistor technology can be used to integrate the high-voltage section of the drive circuits on the substrate of an ELD. The realized column driver levels a 15 V CMOS signal up to a modulation voltage of 50 V. A novel tristate row driver circuit, which is based on the symmetric character of the thin-film transistor, handles row selecting voltages of about 200 V together with current pulses of approximately 100 mA. In this paper, the design, simulation, and measurement of these circuits are described. Technology problems due to high voltages were solved
Keywords :
II-VI semiconductors; cadmium compounds; driver circuits; electroluminescent displays; elemental semiconductors; equivalent circuits; field effect integrated circuits; germanium; integrated circuit design; power integrated circuits; thin film transistors; 100 mA; 20 micron; 200 V; 50 V; CdSe:In; Ge:Cu; HV TFT driver circuits; capacitive display; column driver; complementary CdSe/Ge TFT technology; electroluminescent display; high-voltage driver circuits; large-current drivers; passive AC thin-film EL displays; thin-film transistor technology; tristate row driver circuit; CMOS technology; Circuit simulation; Displays; Driver circuits; Electroluminescent devices; Pulse circuits; Pulse modulation; Substrates; Thin film transistors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
