Title :
Flip chip-bonded GaAs MMICs compatible with foundry manufacture
Author :
Warner, D.J. ; Pickering, K.L. ; Pedder, D.J. ; Buck, B.J. ; Pike, S.J.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
fDate :
2/1/1991 12:00:00 AM
Abstract :
A foundry-compatible flip-chip bonding technology has been developed for gallium arsenide monolithic microwave integrated circuits (MMICs). Metallurgical interactions between lead-tin solder and gold-based circuitry were prevented by the inclusion of a pinhole-free metal barrier layer. The solder bonds were extremely reproducible and provided a self-alignment capability at the flip chip bonding stage. Microwave measurements showed test components to have more uniform characteristics than their wire-bonded counterparts and MMIC amplifiers to have the same behaviour in flip-chip or wire-bonded form. All the bonds on a chip were made in a single solder reflow operation, representing a considerable saving in assembly effort.
Keywords :
III-V semiconductors; MMIC; flip-chip devices; gallium arsenide; integrated circuit technology; Au-based circuitry; GaAs; MMIC amplifiers; Pb-Sn solder; foundry-compatible flip-chip bonding technology; pinhole-free metal barrier layer; self-alignment;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H