Title :
5-Gb/s XOR optical gate based on cross-polarization modulation in semiconductor optical amplifiers
Author :
Soto, H. ; Erasme, D. ; Guekos, G.
Author_Institution :
Fisica Aplicad, CICISE, Baja California, Mexico
fDate :
4/1/2001 12:00:00 AM
Abstract :
We demonstrate a new design for a XOR optical gate operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. Dynamic and optically controlled polarization rotation in the devices is used to control the output power of the device. Static extinction ratio of the order of 20 dB can be obtained. Bit rate doubling at rate of 1.2 and 2.5 Gb/s have been demonstrated.
Keywords :
electro-optical modulation; light polarisation; optical design techniques; optical logic; optical rotation; phase modulation; semiconductor optical amplifiers; 1.2 Gbit/s; 2.5 Gbit/s; GHz regime; Gb/s XOR optical gate; bit rate doubling; cross-polarization modulation; cross-polarization modulation effect; optically controlled polarization rotation; output power; semiconductor optical amplifiers; static extinction ratio; Extinction ratio; Optical control; Optical design; Optical devices; Optical modulation; Optical polarization; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
