DocumentCode :
1469255
Title :
High-Peak-Power Room-Temperature 
m InGaAs–AlAs(Sb) Quantum Cascade Lasers
Author :
Revin, Dmitry G. ; Zhang, Shiyong ; Commin, James Paul ; Kennedy, Kenneth ; Krysa, Andrey B. ; Cockburn, John W.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
Volume :
22
Issue :
11
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
757
Lastpage :
759
Abstract :
We report the development of high-peak-power λ ~ 3.6 μm strain-compensated In0.7Ga0.3As-AlAs(Sb) quantum cascade lasers (QCLs). The QCLs operate up to at least 400 K with high wall-plug efficiency (~9% at 300 K) in the pulsed regime. The lasers are based on a vertical transition bound-to-continuum design. Devices of 30-μm width and 4-mm length, with high reflectivity coating on the rear facet, deliver more than 20-W peak optical power at 285 K with a threshold current density of 3.1 kA/cm2. Over 2 W of peak power is obtained at 400 K.
Keywords :
III-V semiconductors; indium compounds; optical pulse generation; quantum cascade lasers; InGaAs-AlAsSb; bound-to-continuum design; high wall-plug efficiency; high-peak-power room-temperature; pulsed regime; quantum cascade lasers; strain compensated; temperature 300 K; temperature 400 K; vertical transition; wavelength 3.6 mum; Midinfrared emission; quantum cascade laser (QCL); short wavelength;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2045650
Filename :
5446417
Link To Document :
