DocumentCode
1469491
Title
Low-threshold AlGaN-GaN heterostructure field effect transistors for digital applications
Author
Gaska, R. ; Deng, J. ; Shur, M.S.
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
34
Issue
25
fYear
1998
fDate
12/10/1998 12:00:00 AM
Firstpage
2367
Lastpage
2368
Abstract
The fabrication of an AlGaN-GaN based digital inverter circuit is reported, in which a large gain (up to 180) and a noise margin of ~0.5V have been obtained. The measured temperature coefficient of the switching voltage of the inverter was ~3.5 mV/°C up to 90°C. The simulations predict that such an inverter should operate up to ~230°C
Keywords
III-V semiconductors; aluminium compounds; field effect logic circuits; field effect transistors; gallium compounds; high-temperature electronics; integrated circuit noise; leakage currents; logic gates; 230 C; AlGaN-GaN; AlGaN-GaN heterostructure FET; digital applications; digital inverter circuit; fabrication; field effect transistors; low-threshold HFET; switching voltage; temperature coefficient;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981665
Filename
743986
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