Title :
Low-threshold AlGaN-GaN heterostructure field effect transistors for digital applications
Author :
Gaska, R. ; Deng, J. ; Shur, M.S.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
12/10/1998 12:00:00 AM
Abstract :
The fabrication of an AlGaN-GaN based digital inverter circuit is reported, in which a large gain (up to 180) and a noise margin of ~0.5V have been obtained. The measured temperature coefficient of the switching voltage of the inverter was ~3.5 mV/°C up to 90°C. The simulations predict that such an inverter should operate up to ~230°C
Keywords :
III-V semiconductors; aluminium compounds; field effect logic circuits; field effect transistors; gallium compounds; high-temperature electronics; integrated circuit noise; leakage currents; logic gates; 230 C; AlGaN-GaN; AlGaN-GaN heterostructure FET; digital applications; digital inverter circuit; fabrication; field effect transistors; low-threshold HFET; switching voltage; temperature coefficient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981665
