Title :
High-speed monolithic silicon photoreceivers on high resistivity and SOI substrates
Author :
Schaub, J.D. ; Li, R. ; Csutak, S.M. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
We compare monolithic silicon optical receivers fabricated on high resistivity and silicon-on-insulator (SOI) substrates. Each receiver consisted of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At a drain voltage (VDD) of 3.5 V, a photodiode voltage (VPD) of 30 V, and a wavelength of 850 nm, the high resistivity receiver exhibited sensitivities of -31.9 dBm at 622 Mb/s and -23.2 dBm at the maximum operating speed of 1.0 Gb/s. At VDD =5 V and VPD=20 V, the sensitivity of the SOI receiver was -26.1 dBm at 622 Mb/s, -20.2 dBm at 1.0 Gb/s and -12.2 dBm at the maximum speed of 2.0 Gb/s. Single supply operation at 5 V and 3 V was also demonstrated for the SOI receiver. Methods for extending the speed and improving the sensitivity characteristics in more advanced technologies with lower supply voltages are discussed
Keywords :
MOS integrated circuits; electrical resistivity; integrated optoelectronics; optical receivers; p-i-n photodiodes; sensitivity; silicon; substrates; 1 Gbit/s; 2 Gbit/s; 20 V; 3 V; 3.5 V; 30 V; 5 V; 622 Mbit/s; 850 nm; NMOS transimpedance preamplifier; SOI receiver; SOI substrates; Si; drain voltage; high resistivity; high resistivity receiver; high-speed monolithic silicon photoreceivers; lateral p-i-n photodiode; lower supply voltages; maximum operating speed; monolithic silicon optical receivers; photodiode voltage; receiver; sensitivity characteristics; silicon-on-insulator; Circuit noise; Conductivity; Costs; FETs; Integrated circuit technology; Optical receivers; Photodiodes; Signal to noise ratio; Silicon on insulator technology; Voltage;
Journal_Title :
Lightwave Technology, Journal of
