Title :
NAND/NOR logic circuit using single InP-based RTBT
Author :
Velling, P. ; Janssen, G. ; Auer, U. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Solid-State Electron. Dept., Gerhard-Mereator-Univ., Duisburg, Germany
fDate :
12/10/1998 12:00:00 AM
Abstract :
Bias dependent NAND and NOR logic functions using a single InP-based resonant tunnelling bipolar transistor (RTBT) are presented. NAND and NOR functionality is experimentally demonstrated and compared to simulation results using HP MDS-software for the first time. The circuit benefits from the high breakdown voltage of the fabricated RTBT
Keywords :
III-V semiconductors; NAND circuits; NOR circuits; bipolar transistor circuits; bipolar transistors; indium compounds; resonant tunnelling transistors; HP MDS software; InP; InP RTBT; NAND logic circuit; NOR logic circuit; breakdown voltage; resonant tunnelling bipolar transistor; simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981649
