DocumentCode :
1469813
Title :
AuBe ohmic contacts to p-type ZnTe
Author :
Lan, W.H. ; Lin, W.J. ; Yi-Cheng Cheng ; Tai, K. ; Tasi, C.M. ; Wu, P.H. ; Cheng, Yi-Chang ; Chou, S.T. ; Yang, C.M. ; Yi-Chang Cheng ; Huang, K.F.
Author_Institution :
Mater. R&D Center, Chung Shan Inst. of Sci. & Technol., Taoyuan, Taiwan
Volume :
34
Issue :
25
fYear :
1998
fDate :
12/10/1998 12:00:00 AM
Firstpage :
2434
Lastpage :
2435
Abstract :
Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0×10-6 Ω cm2 for a p-doping level of 1.6×1019 cm-3 and at an annealing temperature of 200°C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe
Keywords :
II-VI semiconductors; annealing; beryllium alloys; contact resistance; gold alloys; ohmic contacts; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; 200 C; AuBe ohmic contact; ZnTe-AuBe; annealing; doping level; electrical properties; p-type ZnTe; specific contact resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981563
Filename :
744033
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1469813
بازگشت