• DocumentCode
    1469813
  • Title

    AuBe ohmic contacts to p-type ZnTe

  • Author

    Lan, W.H. ; Lin, W.J. ; Yi-Cheng Cheng ; Tai, K. ; Tasi, C.M. ; Wu, P.H. ; Cheng, Yi-Chang ; Chou, S.T. ; Yang, C.M. ; Yi-Chang Cheng ; Huang, K.F.

  • Author_Institution
    Mater. R&D Center, Chung Shan Inst. of Sci. & Technol., Taoyuan, Taiwan
  • Volume
    34
  • Issue
    25
  • fYear
    1998
  • fDate
    12/10/1998 12:00:00 AM
  • Firstpage
    2434
  • Lastpage
    2435
  • Abstract
    Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0×10-6 Ω cm2 for a p-doping level of 1.6×1019 cm-3 and at an annealing temperature of 200°C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe
  • Keywords
    II-VI semiconductors; annealing; beryllium alloys; contact resistance; gold alloys; ohmic contacts; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; 200 C; AuBe ohmic contact; ZnTe-AuBe; annealing; doping level; electrical properties; p-type ZnTe; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981563
  • Filename
    744033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469813