Title :
Influence of accumulation layer on interface trap density extraction
Author :
Sonnenberg, V. ; Martino, J.A.
Author_Institution :
Escola Politecnica, Sao Paulo Univ., Brazil
fDate :
12/10/1998 12:00:00 AM
Abstract :
The accumulation layer effect in the subthreshold slope of silicon-on-insulator nMOSFETs and in the extraction of the front and back interface trap densities is analysed by simulation. A simple method for minimising this effect is developed and applied experimentally
Keywords :
MOSFET; accumulation layers; interface states; semiconductor device models; silicon-on-insulator; accumulation layer; interface trap density; parameter extraction; silicon-on-insulator nMOSFET; simulation; subthreshold slope;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981678
