Title :
Ultra-high-speed distributed selector IC using GaAs MESFETs
Author :
Murata, K. ; Otsuji, T. ; Imai, Y.
Author_Institution :
NTT Opt. Network Syst. Labs., Yokosuka, Japan
fDate :
12/10/1998 12:00:00 AM
Abstract :
A novel distributed digital selector circuit is proposed. The circuit comprises eight stages of series-gated source coupled FET logic (SCFL) selector cell units, and can be directly connected to an SCFL interface. The integrated circuit (IC) fabricated with 0.16 μm GaAs MESFETs exhibited clear eye-openings at 70 Gbit/s a much higher bit rate than that of conventional selector ICs based on a lumped-element circuit design
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect logic circuits; gallium arsenide; high-speed integrated circuits; 0.16 micron; 70 Gbit/s; GaAs; GaAs MESFET; SCFL interface; bit rate; eye opening; integrated circuit; series-gated source coupled FET logic; ultra-high-speed distributed digital selector IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981664
