Title :
Double epitaxy improves single-photon avalanche diode performance
Author :
Lacaita, Andrea ; Ghioni, Massimo ; Cova, S.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Milano, Italy
fDate :
6/22/1989 12:00:00 AM
Abstract :
A new single-proton avalanche diode (SPAD) with double-epitaxial silicon structure is presented. The device has a time response with short diffusion tail (270 ps time-constant), high resolution (45 ps FWHM, full-width at half maximum of the peak) and low noise, i.e. low-dark-count rate.
Keywords :
avalanche photodiodes; elemental semiconductors; silicon; 270 ps; 45 ps; SPAD; double epitaxial Si structure; high resolution; low noise; low-dark-count rate; semiconductors; short diffusion tail; single-photon avalanche diode performance; time response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890567
