Title :
InAsSbP-InAs LEDs for the 3.3-5.5 μm spectral range
Author :
Matveev, B. ; Zotova, N. ; Karandashov, S. ; Remennyi, M. ; Il´inskaya, N. ; Stus, N. ; Shustov, V. ; Talalakin, G. ; Malinen, J.
Author_Institution :
Ioffe Physico-Tech. Inst., St. Petersburg, Russia
fDate :
10/1/1998 12:00:00 AM
Abstract :
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 μm), carbon dioxide (4.3 μm) and nitric oxide (5.3 μm) optical detection. Output power as high as 50 μW (I=1 A, 128 μs) and FWHM as small as 0.6 μm have been obtained for the first reported InAsSb LED emitting at 5.5 μm
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; liquid phase epitaxial growth; optical fabrication; optical signal detection; semiconductor growth; 1 A; 128 mus; 3.3 to 5.5 mum; 4.3 mum; 5.5 mum; 50 muW; IR spectral range; InAsSb LED; InAsSbP-InAs; InAsSbP-InAs LED; LPE grown InAsSbP-InAs heterostructures; optical detection; output power; room-temperature LEDs;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19982303
