Title :
Mid-infrared InSb and InAlSb diode lasers
Author :
Ashley, T. ; Beswick, J. ; Elliott, C.T. ; Jefferies, R. ; Johnson, A. ; Pryce, G.
Author_Institution :
Defence Evaluation & Res. Agency, Malvern, UK
fDate :
10/1/1998 12:00:00 AM
Abstract :
Diode lasers with an In0.948Al0.052Sb gain region have been grown by molecular beam epitaxy onto nominally matched InGaSb substrates, and onto mismatched InSb substrates. The former had a stimulated emission wavelength of 3.9 μm at 77 K, with the threshold current density being 140 A cm-2 and maximum operating temperature 165 K. The latter had a stimulated emission wavelength of 3.6 μm at 77 K, with the threshold current density being 417 A cm-2 and maximum operating temperature 160 K
Keywords :
III-V semiconductors; aluminium compounds; current density; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; 160 K; 165 K; 3.9 mum; 77 K; In0.948Al0.052Sb; In0.948Al0.052Sb gain region; InAlSb; InAlSb diode lasers; InGaSb; InSb; maximum operating temperature; mid-IR InSb diode lasers; mismatched InSb substrates; molecular beam epitaxy; nominally matched InGaSb substrates; stimulated emission wavelength; threshold current density;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19982310
