Title :
Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates
Author :
L´vova, T.V. ; Andreev, I.A. ; Kunitsyna, E.V. ; Mikhailova, M.P. ; Ulin, V.P. ; Yakovlev, Y.P.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
fDate :
10/1/1998 12:00:00 AM
Abstract :
The authors have performed theoretical and experimental investigations of the chemical interaction between mono- and disulphide water sodium solutions and (100) surfaces of GaSb. It is shown that the pre-epitaxial sulphide treatment of the GaSb substrate improves morphology and interface abruptness of the GaSb-GaInAsSb heterostructures grown by liquid phase epitaxy (LPE)
Keywords :
III-V semiconductors; gallium compounds; indium compounds; liquid phase epitaxial growth; optical fabrication; optical films; optoelectronic devices; semiconductor superlattices; (100) GaSb substrates; GaSb; GaSb substrate; GaSb-GaInAsSb; GaSb-related compounds; GaSb/GaInAsSb heterostructures; chemical interaction; disulphide water sodium solutions; interface abruptness; liquid-phase epitaxial growth; mono-sulphide water sodium solutions; pre-epitaxial sulphide treatment;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19982307
