Title :
High-speed (ft=78 GHz) AlInAs/GaInAs single heterojunction HBT
Author :
Farley, C.W. ; Chang, M.F. ; Asbeck, P.M. ; Sheng, N.H. ; Pierson, R. ; Sullivan, G.J. ; Wang, K.C. ; Nubling, R.B.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
fDate :
6/22/1989 12:00:00 AM
Abstract :
High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ft up to 78 GHz and fmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that fmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor technology; solid-state microwave devices; 78 GHz; AlInAs-GaInAs; S-parameter measurements; current gain; equivalent circuit model; frequency divider; large area devices; low-power digital circuits; semiconductors; single heterojunction HBT; small area devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890570
